Search results for "assurance testing"

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Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs

2019

GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its wide band gap (WBG), large breakdown electric field, and thermal stability improve actual silicon performances. However, at the moment, GaN HEMT technology suffers from some reliability issues, one of the more relevant of which is the dynamic on-state resistance (R) regarding power switching converter applications. In this study, we focused on the drain-to-source on-resistance (R) characteristic…

Materials scienceassurance testingRadiation effects02 engineering and technologyHigh-electron-mobility transistorradiation hardness01 natural scienceslcsh:Technologylaw.inventiontotal ionizing dose (TID)lawPower electronics0103 physical sciencesGeneral Materials Sciencelcsh:MicroscopyHigh-electron-mobility transistor (HEMT)Radiation hardeningLeakage (electronics)lcsh:QC120-168.85010302 applied physicsRadiation hardnessAssurance testinghigh-electron-mobility transistor (HEMT)lcsh:QH201-278.5business.industrylcsh:TTransistorWide-bandgap semiconductor021001 nanoscience & nanotechnologyThreshold voltageSemiconductorlcsh:TA1-2040Gallium nitride (GaN)adiation effectsradiation effectsOptoelectronicslcsh:Descriptive and experimental mechanicslcsh:Electrical engineering. Electronics. Nuclear engineeringTotal ionizing dosegallium nitride (GaN)0210 nano-technologybusinesslcsh:Engineering (General). Civil engineering (General)lcsh:TK1-9971Materials
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Impact of Gamma Radiation on Dynamic R

2019

GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its wide band gap (WBG), large breakdown electric field, and thermal stability improve actual silicon performances. However, at the moment, GaN HEMT technology suffers from some reliability issues, one of the more relevant of which is the dynamic on-state resistance (RON_dyn) regarding power switching converter applications. In this study, we focused on the drain-to-source on-resistance (RDSON) char…

total ionizing dose (TID)high-electron-mobility transistor (HEMT)assurance testingradiation effectsgallium nitride (GaN)radiation hardnessArticleMaterials (Basel, Switzerland)
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